C430-UB290-E1000 查看數據表（PDF） - Cree, Inc
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C430-UB290-E1000 Datasheet PDF : 5 Pages
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XBRIGHT™ 900 Power Chip™ LEDs
Brightness (mW)
Min Typ
Color
Dominant Wavelength (nm) Forward Voltage
Min Typ Max
Typ Max
Dimensions
C470-XB900-A
C470-XB900-B
TBD 150
Blue
465 470 475
3.7 4.0
See Fig. 5
All measurements taken at 350mA. “-A” XB LEDs feature Au/Sn backside metalization. “-B” XB LEDs feature Au backside metalization.
XBRIGHT™ 900 UltraViolet Power Chip™ LEDs
Brightness (mW)
Min Typ
Color
Peak Wavelength (nm)
Min Typ Max
Forward Voltage
Typ Max
Dimensions
C405-XB900-A
C405-XB900-B
TBD 250
UV
400 405 410
3.7 4.0
See Fig. 5
All measurements taken at 350mA. “-A” XB LEDs feature Au/Sn backside metalization. “-B” XB LEDs feature Au backside metalization.
Fig. 1
Topside View – CB230
G• SiC® LED Chip
200 x 200 µm
Mesa (junction)
175 x 175 µm
Bottom View
Gold Bond Pad
120 µm Diameter
Die Cross Section
Anode (+)
h = 250 µm
Backside
Metallization
Cathode (-)
GaN/InGaN
SiC Substrate h
Fig. 2
Topside View – CB290 and UB291
Bottom View
G•SiC® LED Chip
300 x 300 µm
Mesa (junction)
240 x 240 µm
Gold Bond Pad
120 µm Diameter
Die Cross Section
Anode (+)
h = 250 µm
Backside
Metallization
Cathode (-)
GaN/InGaN
SiC Substrate h
CPR3AX Rev. D
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