LT1055AM(Rev_A) 查看數據表（PDF） - Linear Technology

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LT1055AM
(Rev.:Rev_A)

Precision, High Speed, JFET Input Operational Amplifiers

Linear Technology 

LT1055/LT1056

ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, 0°C ≤ TA ≤ 70°C unless otherwise noted.

SYMBOL PARAMETER

VOS

Input Offset Voltage (Note1)

IOS

IB

AVOL

CMRR

PSRR

VOUT

Average Temperature

Coefficient of Input Offset

Voltage

Input Offset Current

Input Bias Current

Large-Signal Voltage Gain

Common-Mode Rejection Ratio

Power Supply Rejection Ratio

Output Voltage Swing

CONDITIONS

LT1055 H Package

LT1056 H Package

LT1055 N8 Package

LT1056 N8 Package

H Package (Note 5)

N8 Package (Note 5)

Warmed Up LT1055

TA = 70°C

LT1056

Warmed Up LT1055

TA = 70°C

LT1056

VO = ±10V, RL = 2k

VCm = ±10.5V

VS = ±10V to ±18V

RL = 2k

LT1055AC

LT1056AC

MIN TYP MAX

q—

q—

q—

q—

100 330

100 360

—

—

—

—

q—

1.2

4.0

q—

—

—

q—

10

50

q—

14

70

q—

q—

±30 ±150

±40 ±80

q 80 250 —

q 85 100 —

q 89 105 —

q ±12 ±13.1 —

LT1055CH/LT1056CH

LT1055CN8/LT1056CN8

MIN TYP MAX

—

140 750

—

140 800

—

250 1250

—

280 1350

—

1.6 8.0

—

3.0 12.0

—

16

80

—

18 100

—

±40 ±200

—

±50 ±240

60

250 —

82

98

—

87

103 —

±12 ±13.1 —

UNITS

µV

µV

µV

µV

µV/°C

µV/°C

pA

pA

pA

pA

V/mV

dB

dB

V

VS = ±15V, VCM = 0V, –55°C ≤ TA ≤ 125°C unless otherwise noted.

SYMBOL PARAMETER

CONDITIONS

VOS

Input Offset Voltage (Note1)

LT1055

q

LT1056

q

Average Temperature

(Note 5)

q

Coefficient of Input Offset

Voltage

IOS

Input Offset Current

Warmed Up LT1055

q

TA = 125°C LT1056

q

IB

Input Bias Current

Warmed Up LT1055

q

TA = 125°C LT1056

q

AVOL

Large-Signal Voltage Gain

VO = ±10V, RL = 2k

q

CMRR Common-Mode Rejection Ratio VCM = ±10.5V

q

PSRR Power Supply Rejection Ratio VS = ±10V to ±17V

q

VOUT

Output Voltage Swing

RL = 2k

q

LT1055AM

LT1056AM

MIN TYP MAX

— 180 500

— 180 550

—

1.3

4.0

— 0.20 1.2

— 0.25 1.5

— ±0.4 ±2.5

— ±0.5 ±3.0

40 120 —

85 100 —

88 104 —

±12 ±12.9 —

LT1055M

LT1056M

MIN TYP MAX

—

250 1200

—

250 1250

—

1.8 8.0

—

0.25 1.8

—

0.30 2.4

—

±0.5 ±4.0

—

±0.6 ±5.0

35

120 —

82

98

—

86

102 —

±12 ±12.9 —

UNITS

µV

µV

µV/°C

nA

nA

nA

nA

V/mV

dB

dB

V

The q denotes specifications which apply over the full operating

temperature range.

For MIL-STD components, please refer to LTC883 data sheet for test

listing and parameters.

Note 1: Offset voltage is measured under two different conditions:

(a) approximately 0.5 seconds after application of power; (b) at TA = 25°C

only, with the chip heated to approximately 38°C for the LT1055 and to

45°C for the LT1056, to account for chip temperature rise when the device

is fully warmed up.

Note 2: 10Hz noise voltage density is sample tested on every lot of A

grades. Devices 100% tested at 10Hz are available on request.

Note 3: This parameter is tested on a sample basis only.

Note 4: Current noise is calculated from the formula: in = (2qlB)1/2, where

q = 1.6 × 10–19 coulomb. The noise of source resistors up to 1GΩ

swamps the contribution of current noise.

Note 5: Offset voltage drift with temperature is practically unchanged when

the offset voltage is trimmed to zero with a 100k potentiometer between

the balance terminals and the wiper tied to V+. Devices tested to tighter

drift specifications are available on request.

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