VTP9412 查看數據表（PDF） - PerkinElmer Inc
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VTP9412 Datasheet PDF : 1 Pages
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VTP Process Photodiodes
VTP9412
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a
recessed ceramic package. Chip is coated with
a protective layer of clear epoxy. These diodes
exhibit low dark current under reverse bias and
fast speed of response.
CASE 20 6 mm CERAMIC
CHIP ACTIVE AREA: .0025 in2 (1.6 mm2)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
ISC
TC ISC
VOC
TC VOC
ID
RSH
CJ
Re
SR
λrange
λp
VBR
θ1/2
NEP
D*
Short Circuit Current
ISC Temperature Coefficient
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 50 V
H = 0, V = 10 mV
H = 0, V = 15 V
940 nm
@ Peak
VTP9412
Min.
Typ.
Max.
10
17
.20
350
-2.0
7
.4
6
.011
.55
400
1150
925
50
140
±50
8.7 x 10-14 (Typ.)
1.5 x 10 12 (Typ.)
UNITS
µA
%/°C
mV
mV/°C
nA
GΩ
pF
A/(W/cm2)
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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