VTS2086 查看數據表（PDF） - PerkinElmer Inc
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VTS2086 Datasheet PDF : 1 Pages
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VTS Process Photodiodes
VTS__86
PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon
photodiodes is characterized for use in the
photovoltaic (unbiased) mode. Their excellent speed
and broadband sensitivity makes them ideal for
detecting light from a variety of sources such as
LEDs, IREDs, flashtubes, incandescent lamps,
lasers, etc. Improved shunt resistance minimizes
amplifier offset and drift in high gain systems. The
solderable contact system on these photodiodes
provides a cost effective design solution for many
applications.
PACKAGE DIMENSIONS inch (mm)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
-40°C to 150°C
Series 20, 31
-40°C to 105°C
Operating Temperature:
Series 30
-40°C to 125°C
Series 20, 31
-40°C to 105°C
Series 30
CASE 44B
ANODE (ACTIVE) SURFACE SHOWN
CATHODE IS BACKSIDE
DIMENSIONS
VTS__86
L
.100 (2.54)
W
ACTIVE AREA
.200 (5.08)
.0152 (102)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTS curves, page 67)
VTS__86
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Typ.
Max.
ISC Short Circuit Current
H = 1000 lux, 2850 K
60
80
TC ISC ISC Temperature Coefficient
H = 1000 Lux, 2850 K
.20
ID
Dark Current
H = 0, VR = 100 mV
10
100
TC ID ID Temp. Coefficient
H = 0, VR = 100 mV
+11
RSH Shunt Resistance
H = 0, VR = 10 mV
6.0
CJ Junction Capacitance
H = 0, V = 0 V, 1 MHz
0.25
SR Sensitivity
@ 400 nm
.18
0.20
Re Responsivity
400 nm, 0.18 A/W
0.02
TC VOC Sensitivity @ Peak
925 nm
0.60
tR/tF Response Time @ 1 kΩ Load VR = 1 V, 830 nm
0.75
VOC Open Circuit Voltage
H = 1000 Lux, 2850 K
0.25
0.45
TC VOC VOC Temperature Coefficient
H = 1000 Lux, 2850 K
-2.6
UNITS
µA
%/°C
nA
%/°C
MΩ
nF
A/W
A/(W/cm2)
A/W
µsec
Volts
mV/°C
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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