MMPQ6502 查看數據表（PDF） - Fairchild Semiconductor
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MMPQ6502 Datasheet PDF : 6 Pages
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Quad NPN & PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 50 V, IE = 0
VEB = 3.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 300 mA
IC = 150 mA, IB = 15 mA
IC = 300 mA, IB = 30 mA
IC = 150 mA, IB = 15 mA
IC = 300 mA, IB = 30 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
Cib
Input Capacitance
fT
Current-Gain Bandwidth Product
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCB = 10 V, f = 1.0 MHz
VBE = 2.0 V, f = 1.0 MHz
IC = 50 mA, VCE = 20 V,
f = 100 MHz
30
V
60
V
5.0
V
30
nA
30
nA
50
75
100
30
0.4
V
1.4
V
1.3
V
2.0
V
8.0
pF
30
pF
200
MHz
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