ALD1106 查看數據表（PDF） - Advanced Linear Devices
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ALD1106 Datasheet PDF : 11 Pages
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range SAL, PAL, SBL, PBL packages
DA, DB packages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
10.6V
10.6V
500mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
ALD1106
Parameter Symbol
Min
Typ
Max
Gate Threshold VT
0.4
0.7
1.0
Voltage
Offset Voltage
VGS1-VGS2
VOS
Gate Threshold
Temperature
Drift 2
TCVT
2
10
-1.2
On Drain
Current
IDS (ON) 3.0
4.8
Transconductance GIS
Mismatch
∆Gfs
Output
Conductance
GOS
1.0
1.8
0.5
200
Drain Source RDS (ON)
On Resistance
350
500
Drain Source
On Resistence ∆DS (ON)
0.5
Mismatch
Drain Source
Breakdown
BVDSS
12
Voltage
Off Drain
Current 1
IDS (OFF)
10
400
4
Gate Leakage IGSS
Current
0.1
10
1
Input
CISS
Capacitance 2
1
3
Notes: 1 Consists of junction leakage currents
2 Sample tested parameters
ALD1116
Min
Typ
Max
0.4
0.7
1.0
2
10
Unit
V
Test
Conditions
IDS = 1.0µA VGS = VDS
mV IDS = 10µA VGS = VDS
-1.2
3.0
4.8
1.0
1.8
0.5
200
350
mV/°C
mA VGS = VDS = 5V
mmho VDS = 5V IDS= 10mA
%
µmho VDS = 5V IDS = 10mA
500
Ω
VDS = 0.1V VGS = 5V
0.5
%
VDS = 0.1V VGS = 5V
12
10
0.1
1
V
IDS = 1.0µA VGS = 0V
400
pA
VDS =12V VGS = 0V
4
nA TA = 125°C
10
pA
VDS = 0V VGS = 12V
1
nA TA = 125°C
3
pF
ALD1106/ALD1116
Advanced Linear Devices
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