BZA800A-SERIES 查看數據表（PDF） - Philips Electronics
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BZA800A-SERIES Datasheet PDF : 10 Pages
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Philips Semiconductors
Quadruple ESD transient voltage suppressor
Preliminary specification
BZA800A-series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
IZ
IF
IFSM
Ptot
PZSM
Tstg
Tj
working current
Ta = 25 °C
continuous forward current
Ta = 25 °C
non-repetitive peak forward current tp = 1 ms; square pulse
total power dissipation
Ta = 25 °C
non repetitive peak reverse power square pulse; tp = 1 ms; see Fig.3
dissipation
BZA856A, BZA862A, BZA868A
BZA820A
storage temperature
junction temperature
Notes
1. DC working current limited by Ptot max.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to all diodes loaded
ambient
MIN. MAX. UNIT
−
note 1 mA
−
200
mA
−
3.75 A
−
335
mW
−
24
W
−
17
W
−65
+150 °C
−
150
°C
VALUE UNIT
370
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IR
reverse current
BZA856A
BZA862A
BZA868A
BZA820A
Tj = 25 °C unless otherwise specified
IF = 200 mA
VR = 3 V
VR = 4 V
VR = 4.3 V
VR = 15 V
TYPE
WORKING VOLTAGE
VZ (V)
at IZ = 1 mA
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZ = 1 mA
TEMP. COEFF.
SZ (mV/K)
at IZ = 1 mA
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
MIN. TYP. MAX.
MAX.
TYP.
MAX.
BZA856A 5.32 5.6 5.88
400
BZA862A 5.89 6.2 6.51
300
BZA868A 6.46 6.8 7.14
200
BZA820A 19 20 21
125
−0.2
240
1.8
200
3
180
16
50
MAX. UNIT
1.3
V
2000 nA
700
nA
200
nA
100
nA
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 1 ms;
Tamb = 25 °C
MAX.
3.2
2.9
2.6
0.6
2000 Apr 18
3
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