IXTP3N120 查看數據表（PDF） - IXYS CORPORATION
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IXTP3N120 Datasheet PDF : 4 Pages
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12
10
VDS = 600V
ID = 1.5A
8
6
4
2
0
0 10 20 30 40 50 60
Gate Charge - nC
Fig. 7 Gate Charge Characteristic Curve
5
VGS = 0V
4
3
TJ = 125OC
TJ = 25OC
2
1
0
0.2
0.4
0.6
0.8
1.0
VSD - Volts
Fig. 9 Drain Current vs Drain to Source Voltage
1.00
IXTA/IXTP 3N120
IXTA/IXTP 3N110
1000
Ciss
f = 1MHz
Coss
100
Crss
10
0 5 10 15 20 25 30 35 40
VDS - Volts
Fig.8 Capacitance Curves
0.10
Single Pulse
0.01
0.00
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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