IXSH35N120A 查看數據表（PDF） - IXYS CORPORATION
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IXSH35N120A Datasheet PDF : 4 Pages
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IXSH 35N120A
Symbol
gfs
IC(on)
Cies
C
oes
Cres
Qg
Qge
Q
gc
td(on)
tri
td(off)
t
fi
Eoff
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
VGE = 15 V, VCE = 10 V
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH
V
CE
=
0.8
V,
CES
R
G
=
2.7
W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
V
CE
=
0.8
V,
CES
R
G
=
2.7
W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher T or increased R
J
G
20 26
S
170
A
3750
pF
235
pF
60
pF
150 190 nC
40 60 nC
70 100 nC
80
ns
150
ns
400 900 ns
500 700 ns
10
mJ
80
ns
150
ns
2.5
mJ
400
ns
700
ns
15
mJ
0.42 K/W
0.25
K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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