IXEN60N120 查看數據表（PDF） - IXYS CORPORATION
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IXEN60N120 Datasheet PDF : 4 Pages
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20
100
mJ
td(on) 9n0s
16
80
Eon
12
tr
70 t
60
50
8
4
Eon
VCE = 600 V
40
VGE = ±15 V
30
RG = 22 Ω
TVJ = 125°C
20
10
0
0
0 20 40 60 80 100 A 120
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
15.0
mJ
12.5
Eon
10.0
VCE = 600 V
VGE = ±15 V
IC = 50 A
TVJ = 125°C
300
td(on) ns
250
200 t
7.5
Eon
5.0
150
tr
100
2.5
50
0.0
0
0
20 40 60 80 100 Ω 120
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
120
A
100
ICM 80
60
40
20 RG = 22 Ω
TVJ = 125°C
0
0 200 400 600 800 1000 1200 1400 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
IXEN 60N120
IXEN 60N120D1
8
mJ
Eoff 6
4
2 Eoff
800
ns
td(off)
600
t
VCE = 600 V
VGE = ±15 V
RG = 22 Ω
TVJ = 125°C
400
200
0
tf
0
20
40
60
80
100 A
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
12
mJ
10
Eoff
8
VCE = 600 V
VGE = ±15 V
IC = 50 A
TVJ = 125°C
td(off)
1200
ns
1000
800 t
6
600
4
Eoff
400
2
200
0
tf
0
0 20 40 60 80 100 Ω 120
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
ZthJC
0.01
0.001
diode
IGBT
single pulse
0.0001
0.00001 0.0001 0.001 0.01
0.1
t
IXEN60N120
1 s 10
Fig. 12 Typ. transient thermal impedance
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