TS921ID 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
TS921ID Datasheet PDF : 14 Pages
| |||
Electrical Characteristics
2 Electrical Characteristics
TS921
Table 3.
Symbol
Electrical characteristics for VCC = 3V, VDD = 0V, Vicm = VCC/2, RL connected
to VCC/2, Tamb = 25°C (unless otherwise specified)
Parameter
Conditions
Min. Typ. Max. Unit
Vio Input Offset Voltage
at Tmin. ≤ Tamb ≤ Tmax
3
mV
5
DVio Input Offset Voltage Drift
2
µV/°C
Iio Input Offset Current
Vout = 1.5V
1
30
nA
Iib Input Bias Current
Vout = 1.5V
15 100
nA
VOH High Level Output Voltage
RL = 600Ω
RL = 32Ω
2.87
2.63
V
VOL Low Level Output Voltage
RL = 600Ω
RL = 32Ω
100
180
mV
Avd Large Signal Voltage Gain
Vout = 2Vpk-pk
RL = 600Ω
RL = 32Ω
35
V/mV
16
GBP Gain Bandwidth Product
RL = 600Ω
4
MHz
ICC Supply Current
no load, Vout = VCC/2
1
1.5
mA
CMR Common Mode Rejection Ratio
60 80
dB
SVR Supply Voltage Rejection Ratio VCC = 2.7 to 3.3V
60 80
dB
Io Output Short-Circuit Current
50 80
mA
SR Slew Rate
0.7 1.3
V/µs
Pm Phase Margin at Unit Gain
RL = 600Ω, CL =100pF
68
Degrees
GM Gain Margin
RL = 600Ω, CL =100pF
12
dB
en Equivalent Input Noise Voltage f = 1kHz
9
--n----V-----
Hz
THD Total Harmonic Distortion
Vout = 2Vpk-pk,
f = 1kHz, Av = 1,
RL = 600Ω
0.005
%
4/14
Share Link: 