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BDS17SMD(2000) 查看數據表(PDF) - Semelab - > TT Electronics plc

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BDS17SMD Datasheet PDF : 2 Pages
1 2
BDS16 BDS16SMD
BDS17 BDS17SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
Parameter
Test Conditions
Collector cut-off current BDS16
VCB = 120V
(IE = 0)
BDS17
VCB = 150V
Collector cut-off current BDS16
VCE = 60V
(IB = 0)
BDS17
VCE = 75V
Emitter cut-off current
(IC = 0)
VEB = 5V
Collector - Emitter
BDS16
sustaining voltage (IB = 0) BDS17
IC = 100mA
Collector - Emitter
saturation voltage
IC = 1A IB = 0.1A
Min.
120
150
Typ.
VBE(on)*
Base - Emitter voltage
IC = 1A
VCE = 2V
hFE*
DC Current gain
IC = 0.5A VCE = 2V
40
IC = 4A VCE = 2V
15
fT
Transition frequency
IC = 0.5A VCE = 10V
30
Max.
20
20
0.1
0.1
Unit
mA
mA
10 mA
V
V
0.5
V
1.0 V
250
150
MHz
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
SWITCHING CHARACTERISTICS
Parameter
ton
On Time
(td + tr)
ts
Storage Time
tf
Fall Time
Test Conditions
IC = 2A VCC = 80V
IB1 = 0.2A
IC = 2A VCC = 80V
IB1 = IB2 = 0.2A
Max.
0.5
3.0
0.4
Unit
ms
ms
ms
THERMAL DATA
RTHj-case
RTHj-a
Thermal resistance junction - case
Thermal resistance junction - ambient
Max. 2.5°C/W
Max. 62.5°C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00

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