AS8E128K32 查看數據表（PDF） - Austin Semiconductor
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AS8E128K32 Datasheet PDF : 13 Pages
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Austin Semiconductor, Inc.
EEPROM
AS8E128K32
PAGE MODE CHARACTERISTICS
Symbol
tAS, tOES
tAH
tCS
tCH
tWP
tDS
tDH, tOEH
Parameter
Min
Address, OE\ Set-Up time
4
Address, Hold time
50
Chip Select Set-up Time
0
Chip Select Hold Time
0
Write Pulse Width (WE\ or CE\)
100
Data Set-up Time
50
Data, OE\ Hold Time
10
Max
Unit
ns
ns
ns
ns
ns
ns
ns
PAGE MODE WRITE WAVEFORMS(1,2)
OE
CE\
ttWWPP
ttWWPPHH
WE\
ttBBLLCC
A0 - A16
ttAASS ttAAHH
VA
DATA
VD
BYTE 0
VA
VA
ttDDSS
ttDDHH
VD
BYTE 1
VA
VD
BYTE 2
VA
VD
BYTE 3
VA
VD
BYTE 126
VA
VD
BYTVED 127
NOTES: 1. A7 through A16 must specify the page address during each high to low transition of WE\ (or CE\).
2. OE\ must be high only when WE\ and CE\ are both low.
3. VD - Valid Data
4. VA - Valid Address
ttWWCC
VD
VIH
tS = 5 msec (min.)
tW = tH = 10 msec (min.)
VH = 12.0V + 0.5V
CE\
VIL
VH
OE\
VIH
VIH
WE\
VIL
AS8E128K32
Rev. 7.6 06/05
CHIP ERASE WAVEFORMS
tS
tH
tW
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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