MPSH69 查看數據表（PDF） - Motorola => Freescale
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MPSH69 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
RF Amplifier Transistor
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
Order this document
by MPSH69/D
MPSH69
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
PD
–15
Vdc
–15
Vdc
–4.0
Vdc
350
mW
2.81
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO –15
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO –15
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO –4.0
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
ICBO
—
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
–100
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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