MITSUBISHI RF POWER MODULE
M68745H
SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
5.0
50
PO
4.5
45
4.0
40
3.5
ηT
35
3.0
30
2.5
25
2.0
20
1.5
15
VDD=7.2V
1.0 VGG=5V
ρin
10
0.5 Pin=1mW
5
ZG=ZL=50 Ω
0.0
0
840 860 880 900 920 940 960
FREQUENCY f (MHz)
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
10
100.00
f=896MHz
VDD=7.2V
PO
VGG=5V
ZG=ZL=50Ω
ηT
1
10.0
0.1
-25
-20 -15 -10 -5 0
INPUT POWER Pin (dBm)
1.0
5
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
10
100.00
f=941MHz
VDD=7.2V
PO
VGG=5V
ZG=ZL=50Ω
ηT
1
10.0
0.1
-25
-20 -15 -10 -5 0
INPUT POWER Pin (dBm)
1.0
5
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
5.0
50
4.5
f=896MHz
VDD=7.2V
PO
45
4.0 Pin=1mW
40
3.5 ZG=ZL=50 Ω
ηT 35
3.0
30
2.5
25
2.0
20
1.5
15
1.0
10
0.5
5
0.0
0
2.5 3.0 3.5 4.0 4.5 5.0
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
5.0
50
4.5
PO 45
4.0
40
3.5
35
ηT
3.0
30
2.5
25
2.0
20
1.5
15
f=941MHz
1.0
VDD=7.2V
10
0.5
Pin=1mW
5
ZG=ZL=50 Ω
0.0
0
2.5 3.0 3.5 4.0 4.5 5.0
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
14
70
f=896MHz
12 VGG=5V
Pin=1mW
60
PO
10 ZG=ZL=50Ω
50
8
40
ηT
6
30
4
20
2
10
0
0
0 2 4 6 8 10 12 14
DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97