LET9085 查看數據表（PDF） - STMicroelectronics

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LET9085

RF POWER TRANSISTORS Ldmos Enhanced Technology

STMicroelectronics 

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

LET9085

RF POWER TRANSISTORS

Ldmos Enhanced Technology

TARGET DATA

• IS-95 CDMA PERFORMANCES

POUT = 20 W

EFF. = 28 %

• EDGE PERFORMANCES

POUT = 35 W

EFF. = 35 %

• GSM PERFORMANCES

POUT = 75 W

EFF. = 55 %

• EXCELLENT THERMAL STABILITY

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

• ESD PROTECTION

DESCRIPTION

The LET9085 is a common source N-Channel en-

hancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1.0

GHz. The LET9085 is designed for high gain and

broadband performance operating in common

source mode at 26 V. Its internal matching makes

it ideal for base station applications requiring high

linearity.

M265

epoxy sealed

ORDER CODE

LET9085

BRANDING

LET9085

PIN CONNECTION

1

2

3

1. Drain

2. Source

3. Gate

ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)

Symbol

Parameter

V(BR)DSS Drain-Source Voltage

VGS

Gate-Source Voltage

ID

Drain Current

PDISS Power Dissipation (@ Tc = 70 °C)

Tj

Max. Operating Junction Temperature

TSTG

Storage Temperature

Value

Unit

65

V

-0.5 to +15

V

12

A

186

W

200

°C

-65 to +150

°C

THERMAL DATA

Rth(j-c) Junction -Case Thermal Resistance

0.7

°C/W

January, 28 2003

1/4

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