1PS79SB40 查看數據表（PDF） - Philips Electronics
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1PS79SB40 Datasheet PDF : 8 Pages
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Philips Semiconductors
Schottky barrier diode
Product specification
1PS79SB40
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
continuous forward voltage
IR
continuous reverse current
Cd
diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.2
IF = 1 mA
IF = 10 mA
IF = 40 mA
VR = 30 V; note 1; see Fig.3
VR = 40 V; note 1; see Fig.3
VR = 0; f = 1 MHz; see Fig.5
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
MAX.
UNIT
380
mV
500
mV
1
V
1
µA
10
µA
5
pF
VALUE
450
UNIT
K/W
1999 Apr 26
3
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