1N5818 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
1N5818 Datasheet PDF : 9 Pages
| |||
Philips Semiconductors
Schottky barrier diodes
Product specification
1N5817; 1N5818; 1N5819
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
1N5817
VF
forward voltage
1N5818
VF
forward voltage
1N5819
IR
reverse current
Cd
diode capacitance
1N5817
see Fig.2
IF = 0.1 A
IF = 1 A
IF = 3 A
see Fig.2
IF = 0.1 A
IF = 1 A
IF = 3 A
see Fig.2
IF = 0.1 A
IF = 1 A
IF = 3 A
VR = VRRMmax; note 1
VR = VRRMmax; Tj = 100 °C
VR = 4 V; f = 1 MHz
1N5818
1N5819
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOD81 standard mounting conditions.
MIN. TYP. MAX. UNIT
−
−
320
mV
−
−
450
mV
−
−
750
mV
−
−
330
mV
−
−
550
mV
−
−
875
mV
−
−
340
mV
−
−
600
mV
−
−
900
mV
−
−
1
mA
−
−
10
mA
−
80
−
pF
−
50
−
pF
−
50
−
pF
CONDITIONS
note 1
VALUE UNIT
100
K/W
1996 May 03
4
Share Link: 