TN815-B 查看數據表（PDF） - STMicroelectronics
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TN815-B Datasheet PDF : 5 Pages
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TN805/TN815-B
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Parameter
Junction to ambient (S=0.5cm2)
Junction to case for D.C
Value
70
2.5
GATE CHARACTERISTICS
PG (AV)= 1W PGM = 10 W (tp = 20 µs)
IGM = 4 A (tp = 20 µs)
VRGM = 5 V
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VGT
VGD
tgt
IH
IL
VTM
IDRM
IRRM
dV/dt
VD = 12V (DC) RL= 33Ω
VD = 12V (DC) RL= 33Ω
VD = VDRM RL = 3.3kΩ
VD = VDRM
IG = 40mA
ITM = 3 x IT(AV)
dIG/dt = 0.5A/us
IT= 150mA Gate open
IG = 1.2 IGT
ITM= 16A tp= 380µs
VDRM Rated
VRRM Rated
Linear slope up to
VD=67%VDRM Gate open
Value
Type
Unit
TN805 TN815
Tj= 25°C MAX
5
15
µA
Tj= 25°C MAX
1.5
V
Tj= 125°C MIN
0.2
V
Tj= 25°C TYP
2
µs
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj = 125°C MAX
Tj= 125°C MIN
25
30
25
30
1.6
10
2
50
150
mA
mA
V
µA
mA
V/µs
ORDERING INFORMATION
TN
SCR
CURRENT
8 05 - 600
SENSITIVITY
2/5
B
PACKAGES :
B: DPAK
VDRM / VRRM
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