NT5DS32M4AW 查看數據表（PDF） - Nanya Technology

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NT5DS32M4AW

128Mb DDR333/300 SDRAM

Nanya Technology 

NT5DS32M4AT NT5DS32M4AW

NT5DS16M8AT NT5DS16M8AW

128Mb DDR333/300 SDRAM

Block Diagram (16Mb x 8)

CKEn

CK

CK

CSn

WE

CAS

RAS

Mode

Registers

12

12

A0-A11,

BA0, BA1

14

2

2

10 Column-Address

Counter/Latch

Bank3

Bank1 Bank2

Clk

DLL

4096

Bank0

Memory

Array

(4096 x 512 x 16)

Sense Amplifiers

I/O Gating

DM Mask Logic

512

(x8)

Column

Decoder

9

COLo

1

16

16

16

Data

8

8

8

DQS

1

Generator

COLo Input

Register

Write Mask 1

1

FIFO

&

Drivers

1

2

16 8

1

8

clk

out

cinlk

Data

8

8

DQS

1

8

Clk

COLo

1

DQ0-DQ7,

DM

DQS

Note: This Functional Block Diagram is intended to facilitate user understanding of the operation of

the device; it does not represent an actual circuit implementation.

Note: DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidi-

rectional DQ and DQS signals.

Preliminary

08/01

7

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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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