NT128S64V88C0G-75B 查看數據表（PDF） - Nanya Technology
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NT128S64V88C0G-75B Datasheet PDF : 12 Pages
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NT128S64V88C0G
128MB : 16M x 64
Unbuffered SDRAM Module
16Mx64 bit One Bank Unbuffered SDRAM Module
based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
Features
l 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module
l Intended for PC133 applications
- Clock Frequency: 133MHz
- Clock Cycle: 7.5ns
- Clock Assess Time: 5.4ns
l Inputs and outputs are LVTTL (3.3V) compatible
l Single 3.3V ± 0.3V Power Supply
l Single Pulsed RAS interface
l SDRAMs have 4 internal banks
l Module has 1 physical bank
l Fully Synchronous to positive Clock Edge
l Data Mask for Byte Read/Write control
l Auto Refresh (CBR) and Self Refresh
l Automatic and controlled Precharge commands
l Programmable Operation:
- CAS Latency: 2, 3
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8
- Operation: Burst Read and Write or Multiple Burst Read with
Single Write
l Suspend Mode and Power Down Mode
l 4096 Refresh cycles distributed across 64ms
l Gold contacts
l SDRAMs in TSOP Type II Package
l Serial Presence Detect with Write Protect
Description
NT128S64V88C0G-7K/75B/8B are unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as
16Mx64 high-speed memory arrays and are configured as one 16M x 64 physical bank. The DIMMs use eight 16Mx8 SDRAMs in 400mil TSOP
II pack-ages. The DIMMs achieve high-speed data transfer rates of up to 133MHz by employing a prefetch / pipeline hybrid architecture that
supports the JEDEC 1N rule while allowing very low burst power.
All control, address, and data input/output circuits are synchronized with the positive edge of the externally supplied clock inputs.
All inputs are sampled at the positive edge of each externally supplied clock (CK0, CK2). Internal operating modes are defined by combinations
of RAS , CAS , WE , S0 / S2 , DQMB, and CKE0 signals. A command decoder initiates the necessary timings for each operation. A 14-bit
address bus accepts address information in a row / column multiplexing arrangement.
Prior to any Access operation, the CAS latency, burst type, burst length, and Burst operation type must be programmed into the DIMM by
address inputs A0-A9 during the Mode Register Set cycle. The DIMM uses serial presence detects implemented via a serial EEPROM using
the two-pin IIC protocol. The first 128 bytes of serial PD data are used by the DIMM manufacturer. The last 128 bytes are available to the
customer.
Ordering Information
Part Number
Organization
NT128S64V88C0G-7K
NT128S64V88C0G-75B
16Mx64
NT128S64V88C0G-8B
* CL = CAS Latency
MHz.
143MHz
133MHz
133MHz
100MHz
125MHz
100MHz
Speed
CL
t RCD
t RP
3
3
3
2
2
2
3
3
3
2
2
2
3
3
3
2
2
2
Leads
Gold
Power
3.3V
REV 1.0 07 / 2001
1
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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
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