MAC97A8 查看數據表（PDF） - Motorola => Freescale

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MAC97A8

Silicon bidirectional triode thyristor

Motorola => Freescale 

MAC97,A IMPROVED SERIES

ELECTRICAL CHARACTERISTICS (TC = 25°C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Peak Blocking Current(1)

(VD = Rated VDRM, TJ = 110°C, Gate Open)

IRRM

—

—

0.1

v v Peak On-State Voltage (Either Direction)

(ITM = 1.1 A Peak; Pulse Width 2.0 ms, Duty Cycle 2.0%)

VTM

—

—

1.65

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

MAC97

IGT

—

—

10

—

—

10

—

—

10

—

—

10

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

MAC97A

Gate Trigger Voltage, (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+) All Types

MT2(+), G(–) All Types

MT2(–), G(–) All Types

MT2(–), G(+) All Types

(VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C)

MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) All Types

MT2(–), G(+) All Types

Holding Current

(VD = 12 Vdc, ITM = 200 mA, Gate Open)

Gate Controlled Turn–On Time

(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)

Critical Rate–of–Rise of Commutation Voltage

(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS,

On–State Current Duration = 2.0 mS, VDRM = 200 V,

Gate Unenergized, TC = 110°C,

Gate Source Resistance = 150 W, See Figure 13)

Critical Rate–of–Rise of Off State Voltage

(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method)

VGT

IH

tgt

dv/dtc

—

—

5.0

—

—

5.0

—

—

5.0

—

—

7.0

—

—

2.0

—

—

2.0

—

—

2.0

—

—

2.5

0.1

—

—

0.1

—

—

—

—

5.0

—

2.0

—

1.5

—

—

dv/dt

10

—

—

Unit

mA

Volts

mA

Volts

mA

ms

V/ms

V/ms

2

Motorola Thyristor Device Data

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