NTE2341 查看數據表（PDF） - NTE Electronics

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NTE2341

Silicon Complementary NPN transistor. Darlington Driver.

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 0.5mA

– – 1.3 V

IC = 1A, IB = 1mA

– – 1.8 V

Base–Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 1mA, Note 3

– – 2.2 V

Transition Frequency

fT IC = 500mA, VCE = 5V,

f = 100MHz

– 200 – MHz

NTE2341

(NPN)

C

B

E

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

NTE2342

(PNP)

C

B

.500

(12.7)

Min

.021 (.445) Dia Max

ECB

E

.100 (2.54)

.050 (1.27)

.105 (2.67) Max

.205 (5.2) Max

.165

(4.2)

Max

.105 (2.67) Max

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