NTE275 查看數據表（PDF） - NTE Electronics
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NTE275 Datasheet PDF : 2 Pages
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
ON Characteristics
DC Current Gain
hFE VCE = 3V, IC = 2A
750
VCE = 3V, IC = 4A
100
Collector–Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 8mA
–
IC = 4A, IB = 40mA
–
Base–Emitter Saturation Voltage
VBE(sat) IC = 4A, IB = 40mA
–
Base–Emitter ON Voltage
VBE(on) VCE = 3V, IC = 2A
–
Dynamic Characteristics
Magnitude of Common Emitter
|hfe| IC = 1.5A, VCE = 3V, f = 1MHz
4.0
Small–Signal Short–Circuit
Forward Current Transfer Ratio
Output Capacitance
NTE274
NTE275
Cob
VCB = 10V, IE = 0, f = 0.1MHz
–
–
Small–Signal Current Gain
hfe IC = 1.5A, VCE = 3V, f = 1kHz
300
Typ Max Unit
– 18000
–
–
– 2.0 V
– 3.0 V
– 4.0 V
– 2.8 V
–
–
– 120 pF
– 200 pF
–
–
NTE274
C
B
.485 (12.3)
.295 (7.5)
Dia
.062 (1.57)
E
NTE275
.031 (0.78) Dia
.360 (9.14)
Min
.960 (24.3)
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
C
.200
(5.08)
.145 (3.7) R Max
B
Collector/Case
Emitter
E
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