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NTE211

Silicon Complementary Transistors General Purpose Output & Driver

NTE Electronics 

NTE210 (NPN) & NTE211 (PNP)

Silicon Complementary Transistors

General Purpose Output & Driver

Description:

The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack-

age designed for general purpose, medium voltage, medium power amplifier and driver applications

such as series, shunt and switching regulators, and low and high frequency inverters and converters.

Features:

D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Total Power Dissipation (TA = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/°C

Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260°C

Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W

Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W

Note 1. Pulse Test: Pulse Width ≤ 300µs.

Note 2. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25°C.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0

Collector Cutoff Current

ICES VCE = 90V

Emitter Cutoff Current

IEBO VEB = 5V

Min Typ Max Unit

75 –

–

V

–

– 100 nA

–

– 100 nA

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