NTE2428 查看數據表（PDF） - NTE Electronics

零件编号

产品描述 (功能)

生产厂家

NTE2428

Silicon Complementary Transistors General Purpose Switch

NTE Electronics 

NTE2428 (NPN) & NTE2429 (PNP)

Silicon Complementary Transistors

General Purpose Switch

Description:

The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount

package designed for use in thick and thin film circuits. Typical applications include telephone and

general industrial.

Absolute Maximum Ratings:

Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V

Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V

Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

DC Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA

Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W

Thermal Resistance, Junction–to–Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W

Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.

Electrical Characteristics: (TJ = +25°C unles otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

ICBO VCB = 60V, IE = 0

VCB = 60V, IE = 0, TJ = +150°C

V(BR)CEO IC = 10mA, IB = 0

V(BR)CES IC = 10µA, VBE = 0

V(BR)EBO IE = 10µA, IC = 0

VCE(sat) IC = 150mA, IB = 15mA, Note 2

IC = 500mA, IB = 50mA, Note 2

VBE(sat) IC = 150mA, IB = 15mA, Note 2

IC = 500mA, IB = 50mA, Note 2

Note 2. Measured under pulsed conditions.

Min Typ Max Unit

–

– 100 nA

–

– 50 µA

80 –

–

V

90 –

–

V

5

–

–

V

–

– 250 mV

–

– 500 mV

–

– 1.0 V

–

– 1.2 V

Share Link: