NTE11 查看數據表（PDF） - NTE Electronics
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NTE11 Datasheet PDF : 2 Pages
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Emitter Cutoff Current
NTE11
IEBO
VEB = 7V, IC = 0
– – 0.1 µA
NTE12
VEB = 5V, IC = 0
– – 1.0 µA
Collector–Emitter Voltage
NTE11
VCEO
IC = 1mA, IB = 0
20 – – V
NTE12
IC = 1mA, IB = 0
18 – – V
Emitter–Base Voltage
VEBO IE = 10µA, IC = 0
7––V
DC Current Gain
NTE11
hFE1
VCE = 2V, IC = 500mA, Note 1
340 – 600
NTE12
VCE = 2V, IC = 2A, Note 1
180 – 625
NTE11 Only
hFE2 VCE = 2V, IC = 2A, Note 1
150 – –
Collector–Emitter Saturation Voltage VCE(sat)
NTE11
IC = 3A, IB = 100mA, Note 1
––1V
NTE12
IC = 3A, IB = 100mA, Note 1
– 0.4 1.0 V
Transition Frequency
NTE11
fT
VCB = 6V, IE = 50mA, f = 200MHz – 150 – MHz
NTE12
VCB = 6V, IE = 50mA, f = 200MHz – 120 – MHz
Collector Output Capacitance
NTE11
Cob
VCB = 20V, IE = 0, f = 1MHz
– – 50 pF
NTE12
VCB = 20V, IE = 0, f = 1MHz
– 60 – pF
Note 1. Pulse measurement
.210
(5.33)
Max
.500
(12.7)
Min
.135 (3.45) Min
Seating Plane
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
ECB
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
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