NTE61 查看數據表（PDF） - NTE Electronics

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NTE61

Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Second Breakdown

Second Breakdown Collector Current IS/b VCE = 50V, t = 1s (non–repetitive)

5

with Base Forward Bias

VCE = 100V, t = 1s (non–repetitive)

1

ON Characteristics

DC Current Gain

hFE VCE = 2V, IC = 5A

25

Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 500mA

–

Base–Emitter On Voltage

VBE(on) VCE = 2V, IC = 5A

–

Dynamic Characteristics

Current Gain–Bandwidth Product

Output Capacitance

fT

VCE = 10V, IC = 500mA, ftest = 0.5MHz

2

Cob VCB = 10V, IE = 0, ftest = 1MHz

–

Typ Max Unit

– – µA

– – µA

– 150

–1V

–2V

– – MHz

– 1000 pF

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

1.187 (30.16)

.215 (5.45)

.430

(10.92)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

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