TIC126D 查看數據表（PDF） - Power Innovations

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TIC126D

Silicon controlled rectifier

Power Innovations 

TIC126 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

IDRM

IRRM

IGT

VGT

IH

VT

dv/dt

Repetitive peak

off-state current

Repetitive peak

reverse current

Gate trigger current

Gate trigger voltage

Holding current

On-state voltage

Critical rate of rise of

off-state voltage

VD = rated VDRM

VR = rated VRRM

IG = 0

VAA = 12 V

VAA = 12 V

tp(g) ≥ 20 µs

VAA = 12 V

tp(g) ≥ 20 µs

VAA = 12 V

tp(g) ≥ 20 µs

VAA = 12 V

Initiating IT = 100 mA

VAA = 12 V

Initiating IT = 100 mA

IT = 12 A

RL = 100 Ω

RL = 100 Ω

RL = 100 Ω

RL = 100 Ω

(see Note 5)

VD = rated VD

IG = 0

TC = 110°C

TC = 110°C

tp(g) ≥ 20 µs

TC = - 40°C

TC = 110°C

TC = - 40°C

TC = 110°C

2

mA

2

mA

8

20

mA

2.5

0.8 1.5

V

0.2

100

40

1.4

400

mA

V

V/µs

NOTE 5: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from

the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics

RθJC

RθJA

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN TYP MAX UNIT

2.4 °C/W

62.5 °C/W

PRODUCT INFORMATION

2

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