NTE5538 查看數據表（PDF） - NTE Electronics

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NTE5538

Silicon Controlled Rectifier (SCR) 800VDRM, 50A

NTE Electronics 

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Gate Trigger Current

Gate Trigger Voltage

Gate Non–Trigger Voltage

Holding Current

Peak On–State Voltage

Forward Leakage Current

Reverse Leakage Current

Total Turn–On Time

Turn–Off Time

Critical Rate of Rise of

Off–State Voltage

IGT

VGT

VGD

IH

VTM

IDRM

IRRM

tgt

tq

dv/dt

VD = 12V, RL = 33Ω, tp ≥ 20µs

– – 80 mA

– – 1.5 V

TJ = +125°C, VD = 800V, RL = 3.3kΩ

0.2 – – V

IT = 0.5A, Gate Open

– 20 150 mA

ITM = 100A, tp = 10ms

– – 1.9 V

VDRM = 800V

– – 0.02 mA

TJ = +125°C – – 6.0 mA

VDRM = 800V

– – 0.02 mA

TJ = +125°C – – 6.0 mA

IT = 80A, VD = 800V, IG = 200mA, diG/dt = 0.2A/µs – 2 – µs

TJ = +125°C, IT = 80A, VR = 75V, VD = 536V,

diR/dt = 30A/µs, dv/dt = 20V/µs, Gate Open

– 100 – µs

TJ = +125°C, VDRM = 536V, Gate Open,

Linear Slope Up

500 – – V/µs

.600 (15.24)

.060 (1.52)

.173 (4.4)

Isol

.156

(3.96)

Dia.

K

A

G

.550

(13.97) .430

(10.92)

.500

(12.7)

Min

.055 (1.4)

.015 (0.39)

.215 (5.45)

NOTE: Dotted line indicates

that case may have square

corners.

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