NTE5547 查看數據表（PDF） - NTE Electronics

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NTE5547

Silicon Controlled Rectifier (SCR) 35 Amp

NTE Electronics 

Electrical Characteristics: (At “Maximum Ratings” and Specified Case Temperatures)

Parameter

Symbol

Test Conditions

Peak Off–State Current

Maximum On–State Voltage (Peak)

DC Gate Trigger Current

DC Gate Trigger Voltage

Gate Controlled Turn–On Time

Critical Rate of Rise of

Off–State Voltage

IDRM, VDRM & VRRM = Max Rating,

IRRM TJ = +100°C, Gate Open

IHO TC = +25°C

IGT Anode Voltage = 12V, RL = 30Ω,

TC = +25°C

VGT Anode Voltage = 12V, RL = 30Ω,

TC = +25°C

tgt IGT = 150mA

dv/dt Gate Open, TC = +100°C

(Critical)

Min Typ Max Unit

– – 2.0 mA

– – 50 mA

– – 30 mA

– – 2.0 V

– 2.5 – µs

– 100 – V/µs

.562

(14.28)

Max

Gate

1.193

(30.33)

Max

.453

(11.5)

Max

Cathode

.200 (5.08) Max

Anode

1/4–28 UNF–2A

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