GMA01U 查看數據表（PDF） - SANYO -> Panasonic

零件编号

产品描述 (功能)

生产厂家

GMA01U

Epitaxial Planar Silicon Diode

SANYO -> Panasonic 

Ordering number:EN1065C

Features

· Glass sleeve structure.

· Allowable power dissipation : P=300mW max.

· Interterminal capacitance : c=3.0pF max.

· Reverse recovery time : trr=4.0ns max.

· Small size, being about half of DO-35 package

heretofore in use.

GMA01, 01U

Epitaxial Planar Silicon Diode

Very High-Speed Switching,

Bias Stabilizing Applications

Package Dimensions

unit:mm

1114

[GMA01, 0U]

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Peak Reverse Voltage

Reverse Voltage

Peak Forward Current

Average Rectified Current

Surge Forward Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VRM

VR

IFM

IO

IFSM

P

Tj

Tstg

1 s pulse

Electrical Characteristics at Ta = 25˚C

Conditions

Parameter

Symbol

Conditions

Forward Voltage

VF

Reverse Current

IR

Interterminal Capacitance

C

Reverse Recovery TIme

trr

Reverse Recovery Time Test Circuit

IF=1.5mA

VR=55 (GMA01)

VR=75 (GMA01U)

VR=100V (GMA01U)

VR=0, f=1MHz

VR=6V, IF=10mA, RL=50Ω

C:Cathode

A:Anode

GMA01

GMA01U Unit

60

105 V

55

100 V

→

360 mA

→

120 mA

→

500 mA

→

300 mW

→

175 ˚C

→ –65 to +175 ˚C

Ratings

Unit

min typ max

0.55

0.68 V

0.5 µA

0.5 µA

5 µA

3.0 pF

4.0 ns

Unit (resistance : Ω, capacitance : F)

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62098HA (KT)/2239MO/D128MO/1283KI, TS No.1065-1/2

Share Link: