NTE315 查看數據表（PDF） - NTE Electronics

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NTE315

Silicon NPN Transistor, Medium Power Amp

NTE Electronics 

NTE315

Silicon NPN Transistor,

Medium Power Amp

Features:

D AF – HF Medium Power Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A

Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW

Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +120°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50° to +150°C

Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126°C/W

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

Base to Emitter Voltage

Collector–Emitter Sustaining Voltage

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

DC Current Gain

Small Signal Current Gain

Collector Output Capacitance

ICBO VCB = 25V, IE = 0

IEBO VEB = 6V, IC = 0

VBE VCE = 6V, IC = 5mA

VCEO(sus) IC = 2mA

VCE(sat) IC = 1A, IB = 50mA

VBE(sat) IC = 1A, IB = 50mA

hFE1 VCE = 2V, IC = 100mA

hFE2 VCE = 1V, IC = 1A

|hfe| VCB = 2V, IE = –10mA,

f = 10MHZ

CC VCB = 10V, IE = 0, f = 1MHZ

Min Typ Max Unit

– – 0.2 µA

– – 0.2 µA

– – 0.7 V

50 – – V

– – 0.3 V

– – 1.0 V

199 – 649

70 – –

– 18 – dB

– 16 40 pf

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