NTE99 查看數據表（PDF） - NTE Electronics

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NTE99

Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics (Note 2)

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 2)

VCEO(sus) IC = 100mA, IB = 0, Vclamp = 400V

ICEV VCEV = 600V, VBE(off) = 1.5V

IEBO VBE = 2V, IC = 0

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Diode Forward Voltage

Dynamic Characteristic

hFE

VCE(sat)

VBE(sat)

Vf

IC = 20A, VCE = 5V

IC = 40A, VCE = 5V

IC = 20A, IB = 1A

IC = 50A, IB = 10A

IC = 20A, IB = 1A

IF = 20A, Note 3

Output Capacitance

Switching Characteristics

Cob VCB = 10V, IE = 0, ftest = 100kHz

Resistive Load

Delay Time

Rise Time

Storage Time

Fall Time

Inductive Load, Clamped

td

VCC = 250V, IC = 20A,

tr

IB1 = 1A, VBE(off) = 5V,

tp = 25µs, Duty Cycle ≤ 2%

ts

tf

Storage Time

Crossover Time

tsv

IC = 20A(pk), Vclamp = 250V,

tc

IB1 = 1A, VBE(off) = 5V

Min Typ Max Unit

400 –

–

V

–

– 0.25 mA

–

– 350 mA

25 –

–

10 –

–

–

– 2.2 V

–

– 5.0 V

–

– 2.75 V

– 2.5 5.0 V

–

– 750 pF

– 0.14 0.3 µs

– 0.3 1.0 µs

– 0.8 2.5 µs

– 0.3 1.0 µs

– 1.0 2.5 µs

– 0.36 1.0 µs

Note 2. Pulse Test: Pulse Widtg = 300µs, Duty Cycle ≤ 2%.

Note 3. The internal Collector–to–Emitter diode can eliminate the need for an external diode to

clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this

diode is comparable to that of typical fast recovery rectifiers.

Circuit Outline

C

B

[ 50

[8

E

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