NTE2540 查看數據表（PDF） - NTE Electronics

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NTE2540

Silicon NPN Transistor Darlington, High Voltage Switch

NTE Electronics 

NTE2540

Silicon NPN Transistor

Darlington, High Voltage Switch

Features:

D High DC Current Gain: hFE = 600 Min (VCE = 2V, IC = 2A)

D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A

Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Collector Power Dissipation, PC

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Cutoff Current

Emitter Cutoff Current

Collector–Emitter Breakdown Voltage

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Emitter–Collector Forward Voltage

Collector Output Capacitance

Turn–On Time

Storage Time

Fall Time

ICBO VCB = 600V, IE = 0

– – 0.5 mA

IEBO VEB = 5V, IC = 0

– – 3 mA

V(BR)CEO IC = 10mA, IB = 0

400 – – V

hFE VCE = 2V, IC = 2A

600 – –

VCE = 2V, IC = 4A

100 – –

VCE(sat) IC = 4A, IB = 40mA

– – 2.0 V

VBE(sat) IC = 4A, IB = 40mA

– – 2.5 V

VECF IE = 4A, IB = 0

– – 3.0 V

Cob VCB = 50V, IE = 0, f = 1MHz – 35 – pF

ton VCC = 100V,

tstg

IB1 = –IB2 = 40mA,

Duty Cycle ≤ 1%

tf

– 1 – µs

– 8 – µs

– 5 – µs

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