Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
ON Characteristics (Note 1)
DC Current Gain
hFE IC = 0.1mA, VCE = 10V
35 –
IC = 1mA, VCE = 10V
50 –
IC = 10mA, VCE = 10V
75 –
IC = 10mA, VCE = 10V, TA = –55°C 35
–
IC = 150mA, VCE = 10V
100 –
IC = 150mA, VCE = 1.0V
50 –
IC = 500mA, VCE = 10V
40 –
Collector–Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA
–
–
IC = 500mA, IB = 50mA
–
–
Base–Emitter Saturation Voltage
VBE(sat) IC = 150mA, IB = 15mA
0.6 –
IC = 500mA, IB = 50mA
–
–
Small–Signal Characteristics
Current Gain–Bandwidth Product
fT
IC = 20mA, VCE = 20V,
f = 100MHz, Note 2
300 –
Output Capacitance
Input Capacitance
Input Impedance
Cobo
Cibo
hie
VCB = 10V, IE = 0, f = 100kHz
VEB = 0.5V, IC = 0, f = 100kHz
IC = 1mA, VCE = 10V, f = 1kHz
–
–
–
–
2.0 –
IC = 10mA, VCE = 10V, f = 1kHz 0.25 –
Voltage Feedback Ratio
hre IC = 1mA, VCE = 10V, f = 1kHz
–
–
IC = 10mA, VCE = 10V, f = 1kHz
–
–
Small–Signal Current Gain
hfe IC = 1mA, VCE = 10V, f = 1kHz
50 –
IC = 10mA, VCE = 10V, f = 1kHz
75 –
Output Admittance
hoe IC = 1mA, VCE = 10V, f = 1kHz
5.0 –
IC = 10mA, VCE = 10V, f = 1kHz
25 –
Collector–Base Time Constant
rb′Cc IE = 20mA, VCB = 20V, f = 31.8MHz –
–
Noise Figure
NF IC = 100µA, VCE = 10V,
RS = 1kΩ, f = 1kHz
–
–
Real Part of Common–Emitter
Re(hie) IC = 20mA, VCE = 20V, f = 300MHz –
–
High Frequency Input Impedance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Active Region Time Constant
tq
VCC = 30V, VBE(off) = 0.5V,
tr
IC = 150mA, IB1 = 15mA
ts
VCC = 30V, IC = 150mA,
tf
IB1 = IB2 = 15mA
TA
IC = 150mA, VCE = 30V
–
–
–
–
–
–
–
–
–
–
Max Unit
–
–
–
–
300
–
–
0.3
V
1.0
V
1.2
V
2.0
V
– MHz
8
pF
25 pF
8.0 kΩ
1.25
8
4
kΩ
x 10–4
x 10–4
300
375
35 µmhos
200 µmhos
150 ps
4
dB
60
Ω
10 ns
25 ns
225 ns
60 ns
2.5 ns
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.