NTE72 查看數據表（PDF） - NTE Electronics

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NTE72

Silicon NPN Transistor High Current Amp, Fast Switch

NTE Electronics 

Electrical Characteistics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

High Frequency Current Gain

Collector–Emitter Saturation Voltage

hfe IC = 2A, VCE = 5V, f = 20MHz

VCE(sat) IC = 5A, IB = 0.5A, Note 3

2.0 2.8 –

– 0.55 0.9 V

IC = 10A, IB = 1A, Note 3

– 1.1 1.5 V

Base–Emitter Saturation Voltage

Base–Emitter ON Voltage

Collector Cutoff Current

Collector Reverse Current

Emitter Cutoff Current

Collector–Base Capacitance

VBE(sat) IC = 5A, IB = 0.5A, Note 3

– 1.2 1.8 V

IC = 10A, IB = 1A, Note 3

– 1.7 2.2 V

VBE(on) IC = 5A, VCE = 5V, Note 3

–

– 1.8 V

ICES VCE = 60V, VBE = 0

– 0.014 1.0 µA

ICEX VCE = 60V, VEB = 2V, TC = +150°C –

– 500 µA

IEBO VEB = 5V, IC = 0

–

– 1.0 µA

Ccb VCB = 10V, IE = 0, f = 1MHz

– 235 275 pF

Note 3. Pulse Conditions: Pulse Width = 300µs, Duty Cycle = 1%.

Base

.400

(10.16)

.682

(17.32)

Emitter

.600 (19.15)

Dia

Collector/

Isolated Stud

.061 (1.53) Dia

.755

(19.15)

.090 (2.28) Max

1/4–28 UNF–2A

.412

(10.44)

.115

(2.93)

.440

(11.17)

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