NTE2572 查看數據表（PDF） - NTE Electronics

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NTE2572

Silicon NPN Transistor High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Turn–On Time

Storage Time

Fall Time

V(BR)CBO IC = 1mA, IE = 0

V(BR)CEO IC = 1mA, RBE = ∞

V(BR)EBO IE = 1mA, IC = 0

ton VCC = 30V, VBE = –5V,

tstg

10IB1 = –10IB2 = IC = 2A,

Pulse Width = 20µs,

tf

Duty Cycle ≤ 1%

90 – – V

80 – – V

6––V

– 0.1 – µs

– 1.6 – µs

– 0.4 – µs

.402 (10.2)

.035

(0.9)

BC E

.346

(8.8)

.433

(11.0)

.100 (2.54)

.177 (4.5)

.051 (1.3)

.019 (0.5)

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