NTE384 查看數據表（PDF） - NTE Electronics

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NTE384

Silicon NPN Transistor High Voltage Power Amp/Switch

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Cutoff Current

ICEV VCE = 450V, VBE = –1.5V

–

– 0.5 mA

VCE = 450V, VBE = –1.5V, TC = +125°C –

– 5.0 mA

Emitter–Cutoff Current

IEBO VBE = –9V, IC = 0

–

– 1.0 mA

Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, Note 1, Note 2

350 –

–

V

VCER(sus) IC = 200mA, RBE = 50Ω, Note 1, Note 2 375 –

–

V

Emitter–Base Voltage

VEBO IC = 0

9

–

–

V

DC Forward Current

hFE VCE = 1V, IC = 1.2A, Note 1

12 28 50

Base–Emitter Saturation Voltage VBE(sat) IC = 1.2A, IB = 200mA, Note 1

– 1.0 1.6 V

IC = 4A, IB = 800mA, Note 1

– 1.3 2.0 V

Collector–Emitter Saturation Voltage VCE(sat) IC = 1.2A, IB = 200mA, Note 1

– 0.15 0.5 V

IC = 4A, IB = 800mA, Note 1

– 0.5 3.0 V

Output Capacitance

Cobo VCB = 10V, f = 1MHz

–

– 150 pF

Small–Signal Forward Current

Transfer Ratio

|hfe| VCE = 10V, IC = 200mA, f = 1MHz

1

7

–

Second Breakdown Collector

Current

IS/b VCE = 50V, with Base forward biased, 0.9 –

–

A

Pulse duration (non–repetitive) = 1sec

Second Breakdown Energy

Delay Time

Rise Time

Storage Time

Fall Time

ES/b VBE = –4V, IC = 3A, with Base reverse 0.45 –

biased, RB = 50Ω, L = 100µH

– mj

td

VCC = 250V,

tr

IB1 = IB2 = 200mA,

IC = 1.2A

ts

– 0.02 – µs

– 0.3 0.75 µs

– 2.8 5.0 µs

tf

– 0.3 0.75 µs

Note 1. Pulsed: Pulse Duration ≤ 350µs, Duty Factor = 2%.

.062 (1.57)

.485 (12.3)

Dia

.295 (7.5)

.031 (0.78) Dia

.360 (9.14)

Min

.960 (24.3)

Base

.580 (14.7)

.147 (3.75) Dia

(2 Places)

.145 (3.7) R Max

.200

(5.08)

Collector/Case

Emitter

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