NTE2325 查看數據表（PDF） - NTE Electronics
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NTE2325 Datasheet PDF : 2 Pages
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NTE2325
Silicon NPN Transistor
High Voltage Switch
Features:
D High Reverse Voltage: VCBO = 900V (Max)
D High Speed Switching: tf = 0.7µs (Max)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak Collector Current (Note 1), icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCEO(sus)
VCEX(sus)1
IC = 1mA, IE = 0
IC = 5mA, RBE = ∞
IE = 1mA, IC = 0
VCB = 800V, IE = 0
VEB = 5V, IC = 0
IC = 3A, L = 500µH, IB = 1A
IC = 1A, IB1 = 200mA, IB2 = –200mA,
L = 2mH, Clamped
900 –
800 –
7–
––
––
800 –
800 –
–V
–V
–V
10 µA
10 µA
–V
–V
VCEX(sus)2 IC = 500mA, IB1 = 100mA, IB2 = –100mA, 900 –
–
V
L = 5mH, Clamped
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