NTE477 查看數據表（PDF） - NTE Electronics

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NTE477

Silicon NPN Transistor RF Power Output

NTE Electronics 

NTE477

Silicon NPN Transistor

RF Power Output

Description:

The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF

band mobile radio applications.

Features:

D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz

D Emitter ballasted construction and gold metallization for high reliability, and good performances

D Low thermal resistance ceramic package with flange

D Ability of withstanding more than 20:1 load VSWR when operated at VCC = 15.2V,

PO = 40W, f = 175MHz, TC = 25°C

Applications:

30 to 35 watts output power amplifiers in VHF band mobile radio applications.

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Collector–Emitter Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A

Collector Dissipation, PC

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5W

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W

Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C

Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33.3°C/W

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Emitter–Base Breakdown Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

V(BR)EBO IE = 10mA, IO = 0

V(BR)CBO IO = 10mA, IE = 0

V(BR)CEO IO = 0.1A, RBE = ∞

Min Typ Max Unit

3––V

35 – – V

17 – – V

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