NTE2320 查看數據表（PDF） - NTE Electronics

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NTE2320

Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp (Complementary Pair)

NTE Electronics 

Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 3)

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

IC = 10mA, IB = 0, Note 2

IC = 10µA, IE = 0

IE = 10µA, IC = 0

VCB = 50V, IE = 0

VEB = 3V, IC = 0

30 – – V

60 – – V

5–– V

– – 30 nA

– – 30 nA

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Small–Signal Characteristics

hFE

VCE(sat)

VBE(sat)

VCE = 10V, IC = 1mA

VCE = 10V, IC = 10mA

VCE = 10V, IC = 150mA

VCE = 10V, IC = 300mA

IC = 150mA, IB = 15mA

IC = 300mA, IB = 30mA

IC = 150mA, IB = 15mA

IC = 300mA, IB = 30mA

50 – –

75 – –

100 – –

20 – –

– – 0.4 V

– – 01.4 V

– – 1.3 V

– – 2.0 V

Current Gain–Bandwidth Product

fT

VCE = 20V, IC = 50mA, f = 100MHz, 200 350 – MHz

Note 3

Output Capacitance

NPN

PNP

Cobo

VCB = 10V, IE = 0, f = 1MHz

– 6.0 8.0 pF

– 4.5 8.0 pF

Input Capacitance

NPN

PNP

Cibo

VEB = 2V, IC = 0, f = 1MHz

– 20 30 pF

– 17 30 pF

Switching Characteristics

Turn–On Time

Turn–Off Time

ton

VCC = 30V, VEB = 0.5V, IC = 150mA, – 30 – ns

IB1 = 15mA

toff

VCC = 30V, IC = 150mA,

IB1 = IB2 = 15mA

– 225 – ns

Note 1. Voltage and current are negative for PNP transistors.

Note 2. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.

Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

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