NTE232 查看數據表（PDF） - NTE Electronics

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NTE232

Silicon PNP Transistor Darlington Amplifier, Preamp

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Dynamic Characteristics

Current Gain–Bandwidth Product

fT IC = 30mA, VCE = 10V, f =

50MHz

100 125 – MHz

Output Capacitance

Noise Figure

Ccb ICB = 10mA, IE = 0, f = 100MHz – 2.5 – pF

NF IC = 1mA, VCE = 5V, RS = 100kΩ, – 2 – dB

f = 1kHz

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

.500

(12.7)

Min

.021 (.445) Dia Max

.100 (2.54)

EBC

.050 (1.27)

.105 (2.67) Max

.205 (5.2) Max

.165

(4.2)

Max

.105 (2.67) Max

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