NTE6364 查看數據表（PDF） - NTE Electronics

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NTE6364

Silicon Power Rectifier Diode, 300 Amp

NTE Electronics 

Electrical Specifications:

Parameter

Symbol

Test Conditions

Rating Unit

Maximum Average Forward Current

Maximum Peak One–Cycle

Non–Repetitive Surge Current

IF(AV)

IFSM

180° sinusoidal condition, TC = +130°C Max

t = 10ms

t = 8.3ms

No voltage

reapplied

300

A

5000

A

5200

A

Maximum I2t for Fusing

t = 10ms 100% VRRM

3800

A

reapplied

t = 8.3ms

Sinusoidal half wave, 4000

A

I2t

t = 10ms

No voltage Initial TJ = TJ max

214000 A2s

reapplied

t = 8.3ms

195000 A2s

Maximum I2t for Individual Device

Fusing

t = 10ms

t = 8.3ms

100% VRRM

reapplied

151000 A2s

138000 A2s

Maximum I2pt

I2pt t = 0.1 to 10ms, no voltage reapplied

2140000 A2pt

Maximum Value of Threshold

Voltage

VM (TO) TJ = +200°C

0.610 V

Maximum Value of Forward Slope

Resistance

rt

TJ = +200°C

0.751 mΩ

Thermal–Mechanical Specifications:

Parameter

Maximum Operation Junction Temperature

Maximum Storage Temperature

Maximum Internal Thermal Resistance

Junction–to–Case

Thermal Resistance, Case–to–Sink

Mounting Torque

Symbol

Test Conditions

TJ

Tstg

RthJC

DC operation

Rating Unit

–40 to + 180 °C

–55 to + 180 °C

0.18

K/W

RthCS

T

Mounting surface flat, smooth and

greased

Non–lubricated threads

0.08

40.06

(360)

K/W

m•N

(in•lb)

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