GS840F18AGT-10 查看數據表（PDF） - Giga Semiconductor

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GS840F18AGT-10

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

Giga Semiconductor 

GS840F18/32/36AT-7.5/8/8.5/10/12

Simplified State Diagram

X

Deselect

W

R

W

R

X

First Write R

CW

CR

First Read

X

CR

W

R

X Burst Write

CR

CW

R

Burst Read

X

CR

Notes:

1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.

2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, E3) and Write (BA, BB, BC, BD, BW, and GW) control

inputs, and that ADSP is tied high and ADSC is tied low.

3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and

assumes ADSP is tied high and ADV is tied low.

Rev: 1.09 10/2004

9/21

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 1999, GSI Technology

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