BU4S01 查看數據表（PDF） - ROHM Semiconductor

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BU4S01

Single 2-input NOR gate

ROHM Semiconductor 

Standard ICs

•Electrical characteristics

DC characteristics (unless otherwise noted, VSS = 0V, Ta = 25°C)

Parameter

Symbol Min. Typ. Max. Unit

3.5

—

—

V

7.0

—

—

V

Input high level voltage

VIH

11.0

—

—

V

—

—

1.5

V

—

—

3.0

V

Input low level voltage

VIL

—

—

4.0

V

Input high level current

IIH

—

—

0.3

µA

Input low level current

IIL

—

— – 0.3

µA

4.95

—

—

V

Output high level voltage VOH 9.95

—

—

V

14.95

—

—

V

—

—

0.05

V

Output low level voltage VOL

—

—

0.05

V

—

—

0.05

V

– 0.51

—

—

mA

– 2.1

—

—

mA

Output high level current IOH – 1.3

—

—

mA

– 3.4

—

—

mA

0.51

—

1.3

—

Output low level current

IOL

3.4

—

—

mA

—

mA

—

mA

—

Static current dissipation

IDD

—

—

—

0.25

µA

—

0.5

µA

—

1.0

µA

VDD (V)

5

10

15

5

10

15

15

15

5

10

15

5

10

15

5

5

10

15

5

10

15

5

10

15

Conditions

VOUT = 0.5V

VOUT = 1.0V

VOUT = 1.5V

| IOUT | < 1µA

VOUT = 4.5V

VOUT = 9.0V

VOUT = 13.5V

| IOUT | < 1µA

VIH = 15V

VIL = 0V

| IOUT | < 1µA

VIN = VSS

| IOUT | < 1µA

VIN = VDD

VOH = 4.6V

VOH = 2.5V

VOH = 9.5V

VOH = 13.5V

VIN = VSS

VOL = 0.4V

VOL = 0.5V

VOL = 1.5V

VIN = VDD

VIN = VSS, VDD

BU4S01

Measurement

circuit

Fig.1

2

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