DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BU4S584 查看數據表(PDF) - ROHM Semiconductor

零件编号
产品描述 (功能)
生产厂家
BU4S584
ROHM
ROHM Semiconductor ROHM
BU4S584 Datasheet PDF : 4 Pages
1 2 3 4
Standard ICs
Electrical characteristics
DC characteristics (unless otherwise noted, VSS = 0V, Ta = 25°C)
Parameter
Symbol Min.
Input high level voltage
Input low level voltage
Input high level current
Input low level current
Output high level voltage
Output low level voltage
Output high level current
3.5
VIH
7.0
11.0
VIL
IIH
IIL
4.95
VOH 9.95
14.95
VOL
– 0.51
– 2.1
IOH – 1.3
– 3.4
Output low level current
0.51
1.3
IOL
3.4
Hysteresis voltage
Static current dissipation
0.15
VH
0.25
0.40
IDD
Typ. Max.
— 1.5
— 3.0
— 4.0
— 0.3
— – 0.3
— 0.05
— 0.05
— 0.05
— 0.6
— 1.0
— 1.5
— 0.25
— 0.5
— 1.0
Unit VDD (V)
V
5
Conditions
V
10
V
15
V
5
V
10
V
15
µA
18 VIH = 15V
µA
18 VIL = 0V
V
5
V
10
| IOUT | < 1µA
VIN = VSS
V
15
V
5
V
10
| IOUT | < 1µA
VIN = VDD
V
15
mA
5 VOH = 4.6V
mA
5 VOH = 2.5V
mA 10 VOH = 9.5V
VOH = 13.5V
mA 15
VIN = VSS
mA
5 VOL = 0.4V
mA 10 VOL = 0.5V
VOL = 1.5V
mA 15
VIN = VDD
V
5
V
10
V
15
µA
5
µA
10
VIN = VSS, VDD
µA 15
BU4S584
Measurement
circuit
Fig.1
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]