MPSA06 查看數據表（PDF） - General Semiconductor

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MPSA06

Small Signal Transistors (NPN)

General Semiconductor 

MPSA06

ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified

Collector-Emitter Breakdown Voltage

at IC = 1 mA, IB = 0

Emitter-Base Breakdown Voltage

at IE = 100 µA, IC = 0

Collector-Emitter Cutoff Current

VCE = 60 V, IB = 0

Collector-Base Cutoff Current

VCB = 80 V, IE = 0

Collector Saturation Voltage

at IC = 100 mA, IB = 10 mA

SYMBOL

V(BR)CEO

MIN.

80

V(BR)EBO

4.0

ICES

–

ICBO

–

VCEsat

–

Base-Emitter On Voltage

at IC = 10 mA, IB = 1 mA

DC Current Gain

at VCE = 1 V, IC = 10 mA

at VCE = 1 V, IC = 100 mA

Gain-Bandwidth Product

at VCE = 2.0 V, IC = 10 mA, f = 100 MHz

1) Valid provided that leads are kept at ambient temperature

VBE(on)

–

hFE

100

hFE

100

fT

100

.MAX.

–

–

100

100

0.25

1.2

–

–

–

UNIT

V

V

nA

nA

V

V

–

–

MHz

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