BTS100 查看數據表（PDF） - Infineon Technologies

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BTS100

Smart highside power switch TEMPFET®

Infineon Technologies 

TEMPFET® BTS 100

Electrical Characteristics (cont’d)

at Tj = 25 °C, unless otherwise specified.

Parameter

Symbol

min.

Values

Unit

typ.

max.

Reverse Diode

Continuous source current

IS

Pulsed source current

I SM

Diode forward on-voltage

VSD

I F = – 16 A, VGS = 0

Reverse recovery time

t rr

I F = I S, diF/dt = – 100 A/µs, VR = – 30 V

Reverse recovery charge

Q rr

I F = I S, diF/dt = – 100 A/µs, VR = – 30 V

Temperature Sensor

Forward voltage

I TS(on) = – 10 mA, Tj = – 55 ... + 150 °C

Sensor override, tp ≤ 100 µs

Tj = – 55 ... + 160 °C

Forward current

Tj = – 55 ... + 150 °C

Sensor override, tp ≤ 100 µs

Tj = – 55 ... + 160 °C

Holding current, VTS(off) = – 5 V, Tj = 25 °C

Tj = 150 °C

Switching temperature

VTS = – 5 V

Turn-off time

VTS = – 5 V, ITS(on) = – 2 mA

VTS(on)

ITS(on)

IH

TTS(on)

toff

–

–

– 8.0 A

–

–

– 32

V

–

– 1.0 – 1.7

ns

–

90

–

µC

–

0.23

–

–

– 1.4

–

–

–

–

– 0.05

– 0.05

–

–

– 0.1

– 0.2

150

–

0.5

–

V

– 1.5

– 10

mA

– 10

– 600

– 0.5

– 0.3

°C

–

µs

2.5

3

04.96

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