BTS949(2000) 查看數據表（PDF） - Infineon Technologies

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BTS949
(Rev.:2000)

Smart Lowside Power Switch

Infineon Technologies 

BTS 949

Electrical Characteristics

Parameter

at Tj=25°C, unless otherwise specified

Characteristics

Drain source clamp voltage

Tj = - 40 ...+ 150°C, ID = 10 mA

Off state drain current

VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V

Input threshold voltage

ID = 3,9 mA

Input current - normal operation, ID<ID(lim):

VIN = 10 V

Input current - current limitation mode, ID=ID(lim):

VIN = 10 V

Input current - after thermal shutdown, ID=0 A:

VIN = 10 V

Input holding current after thermal shutdown 1)

Tj = 25 °C

Tj = 150 °C

On-state resistance

VIN = 5 V, ID = 19 A, Tj = 25 °C

VIN = 5 V, ID = 19 A, Tj = 150 °C

On-state resistance

VIN = 10 V, ID = 19 A, Tj = 25 °C

VIN = 10 V, ID = 19 A, Tj = 150 °C

Nominal load current (ISO 10483)

VIN = 10 V, VDS = 0.5 V, TC = 85 °C

Symbol

VDS(AZ)

IDSS

VIN(th)

IIN(1)

IIN(2)

IIN(3)

IIN(H)

RDS(on)

RDS(on)

ID(ISO)

Values

Unit

min. typ. max.

60

-

73 V

-

-

25 µA

1.3 1.7 2.2 V

-

-

100 µA

-

400 1000

1500 3000 6000

500

-

300

-

-

18

-

30

-

-

mΩ

22

44

-

14 18

-

25 36

19

-

-A

1If the input current is limited by external components, low drain currents can flow and heat the device.

Auto restart behaviour can occur.

Page 3

07.06.2000

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